Central Semiconductor Corp. Bipolar Transistors - BJT 2N4029

The 2N4029 is a PNP bipolar junction transistor in a TO-18 package, designed for amplification and switching applications. It has a collector-base voltage rating of 80 V, a collector-emitter voltage rating of 80 V, and a base-emitter voltage rating of 5.0 V. The collector current is rated at 100 mA, with a DC current gain (hFE) ranging from 300 to 100 and a saturation voltage of 0.5 V at 5.0 mA collector current. The collector-base capacitance is 500 pF, and the transition frequency is 150 MHz. The device is characterized for operation with a collector-base leakage current of 0.05 μA at 60 V. Noise performance and switching times are not specified.