Central Semiconductor Corp. TRANSISTORS - Transistors (BJT) - Single - 2N4014 2N4014

Description
Manufacturer: Central Semiconductor Corp Win Source Part Number: 052837-2N4014 Packaging: Bulk Mounting: Through Hole Frequency - Transition: 300MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Case / Package: TO-18 VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Collector Cut-off Current(Max): 1.7μA (ICBO) Typical Gain (hFE) (Min): 60 @ 100mA, 1V Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Limited
Request a Quote Datasheet
Description
Manufacturer: Central Semiconductor Corp Win Source Part Number: 052837-2N4014 Packaging: Bulk Mounting: Through Hole Frequency - Transition: 300MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Case / Package: TO-18 VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Collector Cut-off Current(Max): 1.7μA (ICBO) Typical Gain (hFE) (Min): 60 @ 100mA, 1V Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Single - 2N4014 - 052837-2N4014 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2N4014
052837-2N4014
TRANSISTORS - Transistors (BJT) - Single - 2N4014 052837-2N4014
Manufacturer: Central Semiconductor Corp Win Source Part Number: 052837-2N4014 Packaging: Bulk Mounting: Through Hole Frequency - Transition: 300MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Case / Package: TO-18 VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Collector Cut-off Current(Max): 1.7μA (ICBO) Typical Gain (hFE) (Min): 60 @ 100mA, 1V Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Limited

Manufacturer: Central Semiconductor Corp
Win Source Part Number: 052837-2N4014
Packaging: Bulk
Mounting: Through Hole
Frequency - Transition: 300MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: TO-18
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Collector Cut-off Current(Max): 1.7μA (ICBO)
Typical Gain (hFE) (Min): 60 @ 100mA, 1V
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Bipolar Transistors - BJT NPN High Current - 154-2N4014 - Utmel Electronic Limited
Hong Kong, China
Bipolar Transistors - BJT NPN High Current
154-2N4014
Bipolar Transistors - BJT NPN High Current 154-2N4014
Bipolar Transistors - BJT NPN High Current

Bipolar Transistors - BJT NPN High Current

Supplier's Site
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
2N4014
Bipolar Transistors - BJT 2N4014
Bipolar Transistors - BJT NPN High Current

Bipolar Transistors - BJT NPN High Current

Buy Now Datasheet

Technical Specifications

  Win Source Electronics Utmel Electronic Limited VAST STOCK CO., LIMITED
Product Category Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 052837-2N4014 154-2N4014 2N4014
Product Name TRANSISTORS - Transistors (BJT) - Single - 2N4014 Bipolar Transistors - BJT NPN High Current Bipolar Transistors - BJT
Polarity NPN; NPN NPN; NPN
Package Type SOT3; TO-18
Transistor Technology / Material SILICON
Packing Method Bulk; Bulk
Unlock Full Specs
to access all available technical data