Central Semiconductor Corp. Bipolar Transistors - BJT 2N3962

2N3962 is a PNP low-noise bipolar transistor in a TO-18 case, designed for amplification and switching applications. It has a collector-base voltage rating of 60 V, a collector-emitter voltage rating of 60 V, and an emitter-base voltage of 6.0 V. The maximum collector current is 5.0 mA, with a DC current gain (hFE) ranging from 100 to 450 at a collector current of 1.0 mA and collector-emitter voltage of 5.0 V. The saturated collector-emitter voltage is 0.25 V at a collector current of 10 mA. The device exhibits a transition frequency of 40 MHz, a noise figure of 3.0 dB, and a collector-base capacitance of 10 pF. It is qualified for low-noise performance in small-signal circuits.