Central Semiconductor Corp. Single Bipolar Transistors 2N3906 TRE TIN/LEAD

The 2N3906 is a PNP silicon transistor designed for general-purpose amplifier and switching applications, housed in a TO-92 case. It has a collector-base voltage rating of 40 V, a collector-emitter voltage rating of 40 V, and a continuous collector current of 200 mA. The device dissipates up to 625 mW of power and operates with a junction temperature range of -65 to +150°C. Thermal resistance is rated at 200 °C/W. Current gain (hFE) ranges from 100 to 300 at IC = 10 mA and VCE = 1.0 V. Transition frequency is 250 MHz at IC = 10 mA and VCE = 20 V. Collector-emitter saturation voltage is 0.4 V at IC = 50 mA and IB = 5.0 mA. Base-emitter saturation voltage is 0.95 V under the same conditions. Emitter-base voltage is rated at 5.0 V.