Central Semiconductor Corp. Single Bipolar Transistors 2N3906 TRA TIN/LEAD

The 2N3906 is a PNP silicon transistor designed for general-purpose amplifier and switching applications, housed in a TO-92 package. It has a collector-base voltage rating of 40 V, a collector-emitter voltage of 40 V, and a continuous collector current of 200 mA. Power dissipation is rated at 625 mW, with an operating and storage junction temperature range of -65 to +150 °C. Thermal resistance is 200 °C/W. The device meets RoHS standards when ordered with the PBFREE suffix, and Tin/Lead plating is available with the TIN/LEAD suffix. Electrical characteristics include an hFE range of 100 to 300 at IC=10 mA and VCE=1.0 V, and a transition frequency of 250 MHz. The pinout is emitter, base, collector (1-2-3).