Central Semiconductor Corp. Bipolar Transistors - BJT 2N3867

The 2N3867 is a silicon PNP power transistor designed for high-speed switching and amplifier applications, housed in a TO-5 case. It has a collector-base voltage rating of 40 V, a continuous collector current of 3.0 A, and a power dissipation of 6.0 W at TC=25°C. The thermal resistance from junction to case is 29 °C/W, and the operating and storage junction temperature range is -65 to +200 °C. Electrical characteristics include a collector-emitter saturation voltage of up to 1.3 V at 2.5 A collector current and a current gain (hFE) ranging from 20 to 200 depending on bias conditions. The transition frequency is 60 MHz at IC=100 mA and VCE=5.0 V. Collector cutoff current is 150 µA at VCB=40 V and TC=150°C. The part has documented switching times: delay time of 35 ns, rise time of 65 ns, storage time of 325 ns, and fall time of 75 ns.