Central Semiconductor Corp. Bipolar Transistors - BJT 2N3839

The 2N3839 is an NPN silicon RF transistor designed for VHF/UHF amplifier, oscillator, and converter applications, housed in a TO-72 case. It has a collector-base voltage rating of 30 V, a collector-emitter voltage of 15 V, a continuous collector current of 40 mA, and a power dissipation of 200 mW at 25°C. The transistor exhibits a current gain (hFE) between 30 and 150 at VCE=1.0 V and IC=3.0 mA, a transition frequency (fT) of 1.0 to 2.0 GHz at VCE=6.0 V and IC=5.0 mA, and an output power of 30 mW at 500 MHz. Noise figure ranges from 3.9 to 4.5 dB at 450 MHz, and output power gain is 12.5 to 19 dB. Operating and storage junction temperature ranges from -65°C to +200°C.