Central Semiconductor Corp. Bipolar Transistor Arrays 2N3809

Description
Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 50mA 100MHz 600mW Through Hole TO-78-6
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Description
Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 50mA 100MHz 600mW Through Hole TO-78-6
Request a Quote
Datasheet
Datasheet Summary
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The 2N3809 is a PNP low-noise transistor in a TO-78 case, rated for 60V collector-emitter voltage, 50mA collector current, and 600mW total power dissipation. It has a current gain (hFE) of 300 minimum at 0.01mA collector current and 5V collector-emitter voltage, with a collector-emitter saturation voltage of 0.35V at 1mA collector current. The transition frequency is 100MHz. It is identical in package and key ratings to other devices in the 2N3806-2N3811 series, all of which are discontinued as End of Life.

Datasheet Summary
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The 2N3809 is a PNP low-noise transistor in a TO-78 case, rated for 60V collector-emitter voltage, 50mA collector current, and 600mW total power dissipation. It has a current gain (hFE) of 300 minimum at 0.01mA collector current and 5V collector-emitter voltage, with a collector-emitter saturation voltage of 0.35V at 1mA collector current. The transition frequency is 100MHz. It is identical in package and key ratings to other devices in the 2N3806-2N3811 series, all of which are discontinued as End of Life.

Suppliers

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Product
Description
Supplier Links
Bipolar Transistor Arrays - 2N3809-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
2N3809-ND
Bipolar Transistor Arrays 2N3809-ND
Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 50mA 100MHz 600mW Through Hole TO-78-6

Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 50mA 100MHz 600mW Through Hole TO-78-6

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Technical Specifications

  DigiKey
Product Category Transistors
Product Number 2N3809-ND
Product Name Bipolar Transistor Arrays
Polarity PNP
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