Central Semiconductor Corp. Bipolar Transistors - BJT 2N3799

The 2N3799 is a silicon PNP epitaxial planar transistor designed for low noise amplifier applications, housed in a TO-18 case. It has a collector-base voltage rating of 90 V, a collector-emitter voltage rating of 90 V, and a continuous collector current of 50 mA. The power dissipation is 360 mW at 25°C ambient temperature. The current gain (hFE) ranges from 300 to 900 at VCE=5.0 V and IC=500 μA, with a transition frequency (fT) of 30 MHz at IC=500 μA and 80 MHz at IC=1.0 mA. Noise figure is 0.8 dB at 10 kHz with a 3.0 kΩ source resistance. Operating and storage junction temperatures range from -65°C to +200°C.