Central Semiconductor Corp. Bipolar Transistors - BJT 2N3790

The 2N3790 is a silicon PNP power transistor in a TO-3 case, designed for medium speed switching and amplifier applications. It has a collector-base voltage rating of 60 V, a collector-emitter voltage rating of 60 V, and a continuous collector current of 10 A. The device dissipates up to 150 W with a thermal resistance of 1.17 °C/W. The operating and storage junction temperature ranges from -65 °C to +200 °C. The collector-emitter saturation voltage is 1.0 V at 4.0 A collector current and 400 mA base current. Current gain (hFE) ranges from 25 to 90 at 1.0 A collector current and 2.0 V collector-emitter voltage. The emitter-base voltage is rated at 7.0 V.