Central Semiconductor Corp. Bipolar Transistors - BJT 2N3789

The 2N3789 is a silicon PNP power transistor in a TO-3 case, designed for medium speed switching and amplifier applications. It has a collector-base voltage rating of 60 V, a collector-emitter voltage rating of 60 V, and a continuous collector current of 10 A. The device dissipates up to 150 W with a thermal resistance of 1.17 °C/W. The operating and storage junction temperature range is from -65 to +200 °C. Current gain (hFE) ranges from 25 to 90 at VCE=2.0 V and IC=1.0 A. The saturation voltage is 1.0 V at IC=4.0 A and IB=400 mA. The base-emitter on voltage is 2.0 V at VCE=2.0 V and IC=5.0 A. It meets no stated industry standards or qualifications.