Central Semiconductor Corp. Bipolar Transistors - BJT 2N3767

The 2N3767 is an NPN silicon power transistor in a TO-66 case, designed for power amplifier and medium-speed switching applications. It has a collector-emitter voltage rating of 80 V, a collector-base voltage rating of 100 V, a continuous collector current of 4.0 A, and a power dissipation of 25 W. The thermal resistance from junction to case is 7.0 °C/W. The operating and storage junction temperature range is -65 to +200 °C. The transistor has a minimum DC current gain of 20 at VCE=10 V and IC=1.0 A, and a transition frequency of 10 MHz at VCE=10 V and IC=500 mA. Collector-base leakage current is 10 µA at rated VCBO. The collector-emitter saturation voltage is 2.5 V at IC=1.0 A and IB=100 mA.