Central Semiconductor Corp. Bipolar Transistors - BJT 2N3766

The 2N3766 is an NPN silicon power transistor in a TO-66 package, designed for power amplifier and medium speed switching applications. It has a collector-base voltage rating of 80 V, a collector-emitter voltage rating of 60 V, and a continuous collector current of 4.0 A. The device dissipates up to 25 W and has a thermal resistance of 7.0 °C/W. The operating and storage junction temperature range is -65 to +200 °C. Electrical characteristics include a saturation voltage of 1.0 V at IC=500mA and IB=50mA, and a DC current gain (hFE) of 30 at VCE=5.0V and IC=50mA, increasing to 40-160 at IC=500mA. The transition frequency is 10 MHz at IC=500mA. The part complies with RoHS for lead-free variants.