Central Semiconductor Corp. Bipolar Transistors - BJT 2N3741

The 2N3741 is a silicon PNP power transistor in a TO-66 package, designed for power amplifier and medium speed switching applications. It has a collector-emitter voltage rating of 80 V, a continuous collector current of 4.0 A, and a power dissipation of 25 W. The operating and storage junction temperature range is -65 to +200 °C. Electrical characteristics include a saturation voltage of 0.6 V at IC=1.0 A and IB=125 mA, an hFE range of 10 to 40 depending on collector current, and a transition frequency of 4.0 MHz. Collector-base and collector-emitter leakage currents are specified at 100 nA under reverse bias at rated voltage and 150 °C.