Central Semiconductor Corp. Bipolar Transistors - BJT 2N3740

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Bipolar Transistors - BJT Leaded Power Transistor
Description
Bipolar Transistors - BJT Leaded Power Transistor
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The 2N3740 is a silicon PNP power transistor in a TO-66 package, designed for power amplifier and medium speed switching applications. It has a collector-base voltage rating of 60 V, a collector-emitter voltage rating of 60 V, and a continuous collector current of 4.0 A. The device dissipates up to 25 W and operates within a junction temperature range of -65 to +200 °C. Current gain (hFE) ranges from 10 to 200 depending on collector current, with a transition frequency of 4.0 MHz.

Datasheet Summary
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The 2N3740 is a silicon PNP power transistor in a TO-66 package, designed for power amplifier and medium speed switching applications. It has a collector-base voltage rating of 60 V, a collector-emitter voltage rating of 60 V, and a continuous collector current of 4.0 A. The device dissipates up to 25 W and operates within a junction temperature range of -65 to +200 °C. Current gain (hFE) ranges from 10 to 200 depending on collector current, with a transition frequency of 4.0 MHz.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
2N3740
Bipolar Transistors - BJT 2N3740
Bipolar Transistors - BJT Leaded Power Transistor

Bipolar Transistors - BJT Leaded Power Transistor

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number 2N3740
Product Name Bipolar Transistors - BJT
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