Central Semiconductor Corp. Bipolar Transistors - BJT 2N3725

The 2N3725 is an NPN silicon planar epitaxial transistor in a TO-39 case, designed for high voltage, high current, and high speed switching applications. It has a collector-emitter voltage rating of 50 V, a continuous collector current of 1.2 A, and a power dissipation of 0.8 W at 25°C, increasing to 3.5 W with a case temperature of 25°C. The transistor features a gain (hFE) range of 60 to 150 at IC=100mA and VCE=1.0V, a transition frequency of 300 MHz, and saturation voltages of up to 0.26 V at IC=100mA. Its operating and storage junction temperature ranges from -65°C to +200°C.