Central Semiconductor Corp. Bipolar Transistors - BJT 2N3716

The 2N3716 is a silicon NPN power transistor in a TO-3 case for medium speed switching and amplifier applications. It has a collector-emitter voltage rating of 80 V, a continuous collector current of 10 A, and a power dissipation of 150 W. The thermal resistance from junction to case is 1.17 °C/W. The operating and storage junction temperature range is -65 to +200 °C. At IC=5.0A and IB=0.5A, the collector-emitter saturation voltage is 0.8 V and the base-emitter saturation voltage is 1.5 V. The current gain (hFE) at VCE=2.0V and IC=1.0A ranges from 50 to 150. The transition frequency is 4.0 MHz. The turn-on, storage, and turn-off times are 0.4 μs, 0.3 μs, and 0.4 μs respectively.