Central Semiconductor Corp. Transistor 2N3715

Description
NPN POWER TRANSISTOR, 80V COLLECTOR BASE VOLTAGE, TO-3 CASE. FREE 2 YEAR RADWELL WARRANTY
  • Transistor - 124154255 - Radwell International
    Radwell International
  • TRANSISTORS - Transistors (BJT) - Single - 2N3715 - 005699-2N3715 - Win Source Electronics
    Win Source Electronics
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Description
NPN POWER TRANSISTOR, 80V COLLECTOR BASE VOLTAGE, TO-3 CASE. FREE 2 YEAR RADWELL WARRANTY
Request a Quote Datasheet

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Transistor - 124154255 - Radwell International
Radwell International
Willingboro, NJ, United States
Transistor
124154255
Transistor 124154255
NPN POWER TRANSISTOR, 80V COLLECTOR BASE VOLTAGE, TO-3 CASE. FREE 2 YEAR RADWELL WARRANTY

NPN POWER TRANSISTOR, 80V COLLECTOR BASE VOLTAGE, TO-3 CASE. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
TRANSISTORS - Transistors (BJT) - Single - 2N3715 - 005699-2N3715 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2N3715
005699-2N3715
TRANSISTORS - Transistors (BJT) - Single - 2N3715 005699-2N3715
Manufacturer: Central Semiconductor Corp Win Source Part Number: 005699-2N3715 Packaging: Tube/Rail Mounting: Through Hole Frequency - Transition: 4MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -65°C to 200°C (TJ) Case / Package: TO-3 Maximum Current Collector: 10A VCEO Maximum Collector-Emitter Breakdown Voltage: 60V Max Vce (sat): 800mV @ 500mA, 5A Typical Gain (hFE) (Min): 50 @ 1A, 2V Maximum Power Dissipation: 150W Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Limited

Manufacturer: Central Semiconductor Corp
Win Source Part Number: 005699-2N3715
Packaging: Tube/Rail
Mounting: Through Hole
Frequency - Transition: 4MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -65°C to 200°C (TJ)
Case / Package: TO-3
Maximum Current Collector: 10A
VCEO Maximum Collector-Emitter Breakdown Voltage: 60V
Max Vce (sat): 800mV @ 500mA, 5A
Typical Gain (hFE) (Min): 50 @ 1A, 2V
Maximum Power Dissipation: 150W
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Limited

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VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
2N3715
Bipolar Transistors - BJT 2N3715
Bipolar Transistors - BJT NPN GP Power

Bipolar Transistors - BJT NPN GP Power

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Technical Specifications

  Radwell International Win Source Electronics VAST STOCK CO., LIMITED
Product Category RF Transistors Transistors Bipolar RF Transistors
Product Number 124154255 005699-2N3715 2N3715
Product Name Transistor TRANSISTORS - Transistors (BJT) - Single - 2N3715 Bipolar Transistors - BJT
Polarity NPN; NPN
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