Central Semiconductor Corp. Bipolar Transistors - BJT 2N3713

The 2N3713 is a silicon NPN power transistor in a TO-3 hermetically sealed metal package, designed for medium speed switching and amplifier applications. It has a collector-base voltage rating of 80 V, a collector-emitter voltage of 60 V, and can handle a continuous collector current of 10 A. Power dissipation is rated at 150 W with a thermal resistance of 1.17 °C/W. The operating and storage junction temperature ranges from -65 °C to +200 °C. Electrical characteristics include a saturated collector-emitter voltage of 1.0 V at 5.0 A collector current and 0.5 A base current, and a current gain (hFE) of 40 to 120 at 1.0 A collector current and 2.0 V collector-emitter bias. The transition frequency is 4.0 MHz.