Central Semiconductor Corp. Single Bipolar Transistors 2N3713 PBFREE

The 2N3713 is a silicon NPN power transistor for medium speed switching and amplifier applications, in a TO-3 hermetically sealed metal package. It has a collector-emitter voltage rating of 60 V, a collector-base voltage of 80 V, and supports a continuous collector current of 10 A with 150 W power dissipation. The thermal resistance from junction to case is 1.17 °C/W. The operating and storage junction temperature range is -65 °C to +200 °C. At 5.0 A collector current and 0.5 A base current, the collector-emitter saturation voltage is 1.0 V and the base-emitter saturation voltage is 2.0 V. Current gain (hFE) ranges from 40 to 120 at 1.0 A and 2.0 V. The transition frequency is 4.0 MHz. The device is packed in antistatic sleeves, 20 per sleeve.