Central Semiconductor Corp. Bipolar Transistors - BJT 2N3710

The 2N3710 is a silicon NPN transistor designed for low-level, high-gain applications. It is packaged in a TO-92 case with emitter, collector, and base leads assigned to pins 1, 2, and 3 respectively. The device has a collector-base voltage rating of 30 V, a collector-emitter voltage rating of 30 V, and a continuous collector current of 200 mA. Power dissipation is rated at 625 mW, with an operating and storage junction temperature range of -65 to +150 °C. The DC current gain (hFE) ranges from 180 to 660 at VCE = 5.0 V and IC = 1.0 mA. The collector-emitter saturation voltage is 1.0 V at IC = 10 mA and IB = 0.5 mA. The base-emitter voltage ranges from 0.5 to 1.0 V at VCE = 5.0 V and IC = 1.0 mA.