Central Semiconductor Corp. Single Bipolar Transistors 2N3709 PBFREE

The 2N3709 is a silicon NPN transistor in a TO-92 case for low-level, high-gain applications. It has a collector-base voltage rating of 30 V, a collector-emitter voltage of 30 V, and a continuous collector current of 200 mA. Power dissipation is 625 mW at 25°C. The operating and storage junction temperature range is -65 to +150°C. Current gain (hFE) ranges from 45 to 165 at VCE=5.0 V and IC=1.0 mA. The emitter-base voltage is 6.0 V. The collector-emitter saturation voltage is 1.0 V at IC=10 mA and IB=0.5 mA. The base-emitter on-voltage is 0.5 to 1.0 V at VCE=5.0 V and IC=1.0 mA.