Central Semiconductor Corp. Bipolar Transistors - BJT 2N3705

The 2N3705 is a silicon NPN bipolar transistor in a TO-92 package for general-purpose amplifier and switching applications. It has a collector-emitter voltage rating of 30 V, a continuous collector current of 800 mA, and a power dissipation of 625 mW. The emitter-base voltage is 5.0 V, and the operating and storage junction temperature ranges from -65°C to +150°C. The thermal resistance is 200 °C/W. Current gain (hFE) ranges from 50 to 150 at VCE=2.0 V and IC=50 mA. Collector-emitter saturation voltage is specified up to 0.8 V at IC=100 mA and IB=5.0 mA. Base-emitter on-voltage is between 0.5 V and 1.0 V. The transition frequency is 100 MHz, and output capacitance is 12 pF at VCB=10 V and f=1.0 MHz.