Central Semiconductor Corp. Bipolar Transistors - BJT 2N3700

The 2N3700 is a silicon NPN bipolar transistor designed for high current general purpose applications. It is packaged in a TO-18 case and has a collector-emitter voltage rating of 80 V, a continuous collector current of 1.0 A, and a power dissipation of 500 mW. The thermal resistance from junction to ambient is 350 °C/W, with an operating and storage junction temperature range of -65 to +200 °C. Current gain (hFE) ranges from 15 to 300 depending on collector current and temperature, with a transition frequency of 80 to 400 MHz. Collector-emitter saturation voltage is 0.2 V at 150 mA and 0.5 V at 500 mA.