Central Semiconductor Corp. Bipolar Transistors - BJT 2N3584

The 2N3584 is a silicon NPN transistor in a TO-66 package, designed for high-speed switching and high-voltage amplifier applications. It has a collector-emitter voltage rating of 250 V, a continuous collector current of 2.0 A, and a power dissipation of 35 W. The operating and storage junction temperature range is -65 to +200 °C, with a thermal resistance of 5.0 °C/W. Electrical characteristics include a collector cutoff current of 1.0 mA at 340 V and a saturation voltage of 0.75 V at 1.0 A collector current. The transistor provides a current gain (hFE) of 25 to 100 at 10 V and 1.0 A, and has a transition frequency of 10 MHz. It meets no specified industry standards beyond its electrical and thermal ratings.