Central Semiconductor Corp. Bipolar Transistors - BJT 2N3505

PNP silicon bipolars granted for amplification and switching, housed in the TO-18 case, the 2N3505 provides a collector-emitter voltage rating of 60 V, collector-base voltage of 60 V, and emitter-base voltage of 5.0 V. It supports a collector current of 150 mA and has a maximum saturated voltage of 0.4 V at 10 mA. The current gain hFE ranges from 100 to 300 at a collector current of 10 mA and collector-emitter voltage of 150 V. Transition frequency is 200 MHz, and power dissipation is 500 mW. It operates from -65°C to 175°C and meets RoHS standards. Noise figure and switching times are not specified.