PNP bipolar transistor designed for amplification and switching applications, housed in a TO-18 case. It has a collector-emitter breakdown voltage of 45 V, collector-base breakdown voltage of 45 V, and emitter-base breakdown voltage of 5.0 V. Maximum collector current is 150 mA, with a DC current gain (hFE) ranging from 100 to 300 at 10 mA collector current and 150 V collector-emitter voltage. Saturation voltage is 0.25 V at 10 mA collector current. Transition frequency is 200 MHz, and collector output capacitance is 10 pF. Power dissipation is rated for 150 mW.
Bipolar Transistors - BJT PNP Gen Pur SS
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 2N3504 |
| Product Name | Bipolar Transistors - BJT |
