Central Semiconductor Corp. Bipolar Transistors - BJT 2N3503

The 2N3503 is a PNP silicon bipolar transistor in a TO-39 case, intended for amplifier and switch applications. It has a collector-emitter voltage rating of 60 V, a collector-base voltage rating of 60 V, and an emitter-base voltage rating of 5.0 V. The device supports a continuous collector current of 100 mA with a DC current gain (hFE) of at least 300 at 100 mA collector current and 10 V collector-emitter voltage. The collector-emitter saturation voltage is 0.40 V at 100 mA collector current. The power dissipation capability is 150 mW with a transition frequency of 200 MHz and a collector output capacitance of 8.0 pF.