Central Semiconductor Corp. Bipolar Transistors - BJT 2N3497

PNP bipolar junction transistor for amplification and switching, housed in a TO-18 package. It has a collector-emitter breakdown voltage of 120 V, a collector-base voltage rating of 120 V, an emitter-base voltage of 4.0 V, a maximum collector current of 10 mA, a DC current gain (hFE) ranging from 40 to 150 at 10 mA collector current and 0.01 V collector-emitter voltage, a collector-emitter saturation voltage of 0.35 V at 10 mA, a collector cutoff current of 0.1 µA, a collector-base capacitance of 10 pF, and a transition frequency of 150 MHz. It meets RoHS compliance and is qualified under AEC-Q200.