Central Semiconductor Corp. Bipolar Transistors - BJT 2N3496

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Bipolar Transistors - BJT 80Vcbo 80Vceo 4.0Vebo 7.0pF
Description
Bipolar Transistors - BJT 80Vcbo 80Vceo 4.0Vebo 7.0pF
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The 2N3496 is a PNP bipolar junction transistor for amplification and switching, housed in a TO-18 case. It has a collector-base voltage rating of 80 V, a collector-emitter voltage rating of 80 V, an emitter-base voltage rating of 4.0 V, and a maximum collector current of 10 mA. It features a minimum hFE of 40 at 10 mA collector current and 10 V collector-emitter voltage, and a maximum collector-emitter saturation voltage of 0.3 V at 10 mA collector current. The transistor has a maximum collector cutoff current of 0.1 mA at 50 V collector-base voltage, an output capacitance of 7.0 pF, and a transition frequency of 200 MHz. It exhibits a minimum noise figure of 5.0 dB at 1 kHz and 0.1 mA collector current.

Datasheet Summary
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The 2N3496 is a PNP bipolar junction transistor for amplification and switching, housed in a TO-18 case. It has a collector-base voltage rating of 80 V, a collector-emitter voltage rating of 80 V, an emitter-base voltage rating of 4.0 V, and a maximum collector current of 10 mA. It features a minimum hFE of 40 at 10 mA collector current and 10 V collector-emitter voltage, and a maximum collector-emitter saturation voltage of 0.3 V at 10 mA collector current. The transistor has a maximum collector cutoff current of 0.1 mA at 50 V collector-base voltage, an output capacitance of 7.0 pF, and a transition frequency of 200 MHz. It exhibits a minimum noise figure of 5.0 dB at 1 kHz and 0.1 mA collector current.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
2N3496
Bipolar Transistors - BJT 2N3496
Bipolar Transistors - BJT 80Vcbo 80Vceo 4.0Vebo 7.0pF

Bipolar Transistors - BJT 80Vcbo 80Vceo 4.0Vebo 7.0pF

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number 2N3496
Product Name Bipolar Transistors - BJT
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