Central Semiconductor Corp. Bipolar Transistors - BJT 2N3440

Description
Bipolar Transistors - BJT NPN High Voltage
Description
Bipolar Transistors - BJT NPN High Voltage
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NPN high voltage bipolar transistor with a collector-emitter voltage rating of 250 V, a collector-base voltage rating of 300 V, and a base-emitter voltage rating of 7.0 V. It operates with a collector current of 20 mA, has a minimum hFE of 160 at 40 mA collector current, and a collector-emitter saturation voltage of 0.50 V at 50 mA. The device is housed in a TO-39 case and is intended for high voltage switching applications.

Datasheet Summary
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NPN high voltage bipolar transistor with a collector-emitter voltage rating of 250 V, a collector-base voltage rating of 300 V, and a base-emitter voltage rating of 7.0 V. It operates with a collector current of 20 mA, has a minimum hFE of 160 at 40 mA collector current, and a collector-emitter saturation voltage of 0.50 V at 50 mA. The device is housed in a TO-39 case and is intended for high voltage switching applications.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
2N3440
Bipolar Transistors - BJT 2N3440
Bipolar Transistors - BJT NPN High Voltage

Bipolar Transistors - BJT NPN High Voltage

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number 2N3440
Product Name Bipolar Transistors - BJT
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