Central Semiconductor Corp. Bipolar Transistors - BJT 2N3439

Description
Bipolar Transistors - BJT NPN High Voltage
Description
Bipolar Transistors - BJT NPN High Voltage
Datasheet
Datasheet Summary
Powered by GS/AI

NPN high voltage bipolar transistor designed for high voltage applications with a collector-emitter voltage rating of 350 V and a collector-base voltage rating of 450 V. It has a maximum collector current of 20 mA, a minimum DC current gain of 160 at 40 mA collector current, and a collector-emitter saturation voltage of 0.50 V at 50 mA. The device is packaged in a TO-39 case.

Datasheet Summary
Powered by GS/AI

NPN high voltage bipolar transistor designed for high voltage applications with a collector-emitter voltage rating of 350 V and a collector-base voltage rating of 450 V. It has a maximum collector current of 20 mA, a minimum DC current gain of 160 at 40 mA collector current, and a collector-emitter saturation voltage of 0.50 V at 50 mA. The device is packaged in a TO-39 case.

Suppliers

Company
Product
Description
Supplier Links
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
2N3439
Bipolar Transistors - BJT 2N3439
Bipolar Transistors - BJT NPN High Voltage

Bipolar Transistors - BJT NPN High Voltage

Buy Now Datasheet

Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number 2N3439
Product Name Bipolar Transistors - BJT
Unlock Full Specs
to access all available technical data