Central Semiconductor Corp. Bipolar Transistors - BJT 2N3421

Description
Bipolar Transistors - BJT NPN Power SW
Description
Bipolar Transistors - BJT NPN Power SW
Datasheet
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The 2N3421 is an NPN bipolar junction transistor for amplification and switching, housed in a TO-39 case. It has a collector-emitter voltage rating of 80 V, a collector-base voltage rating of 125 V, and an emitter-base voltage rating of 8.0 V. The continuous collector current is 2.0 A, with a DC current gain (hFE) ranging from 160 to 1,000 at a collector current of 40 mA and a collector-emitter voltage of 2.0 V. The saturation voltage is 0.50 V at a collector current of 2,000 mA. The transition frequency is 40 MHz, and the collector-base capacitance is 150 pF.

Datasheet Summary
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The 2N3421 is an NPN bipolar junction transistor for amplification and switching, housed in a TO-39 case. It has a collector-emitter voltage rating of 80 V, a collector-base voltage rating of 125 V, and an emitter-base voltage rating of 8.0 V. The continuous collector current is 2.0 A, with a DC current gain (hFE) ranging from 160 to 1,000 at a collector current of 40 mA and a collector-emitter voltage of 2.0 V. The saturation voltage is 0.50 V at a collector current of 2,000 mA. The transition frequency is 40 MHz, and the collector-base capacitance is 150 pF.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
2N3421
Bipolar Transistors - BJT 2N3421
Bipolar Transistors - BJT NPN Power SW

Bipolar Transistors - BJT NPN Power SW

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number 2N3421
Product Name Bipolar Transistors - BJT
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