Central Semiconductor Corp. Bipolar Transistors - BJT 2N3417 APM

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Bipolar Transistors - BJT NPN 50Vcbo 50Vceo 5.0Vebo 500mA 625mW
Description
Bipolar Transistors - BJT NPN 50Vcbo 50Vceo 5.0Vebo 500mA 625mW
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The 2N3417 is a silicon NPN transistor in a TO-92 package, designed for general-purpose and switching applications. It has a collector-base voltage rating of 50 V, a collector-emitter voltage rating of 50 V, and an emitter-base voltage rating of 5.0 V. The continuous collector current is 500 mA, and the power dissipation is 625 mW at 25°C. The device features a minimum hFE of 180 and a maximum of 540 at VCE=4.5 V and IC=2.0 mA. Operating and storage junction temperatures range from -65°C to +150°C. The TO-92 case has pin assignments of emitter, base, and collector for the MPS3417 variant.

Datasheet Summary
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The 2N3417 is a silicon NPN transistor in a TO-92 package, designed for general-purpose and switching applications. It has a collector-base voltage rating of 50 V, a collector-emitter voltage rating of 50 V, and an emitter-base voltage rating of 5.0 V. The continuous collector current is 500 mA, and the power dissipation is 625 mW at 25°C. The device features a minimum hFE of 180 and a maximum of 540 at VCE=4.5 V and IC=2.0 mA. Operating and storage junction temperatures range from -65°C to +150°C. The TO-92 case has pin assignments of emitter, base, and collector for the MPS3417 variant.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
2N3417 APM
Bipolar Transistors - BJT 2N3417 APM
Bipolar Transistors - BJT NPN 50Vcbo 50Vceo 5.0Vebo 500mA 625mW

Bipolar Transistors - BJT NPN 50Vcbo 50Vceo 5.0Vebo 500mA 625mW

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number 2N3417 APM
Product Name Bipolar Transistors - BJT
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