Central Semiconductor Corp. Bipolar Transistors - BJT 2N3403

The 2N3403 is an NPN silicon bipolar junction transistor in the TO-92HS package with a power dissipation of 1.0 watt at 25°C. It has a collector-emitter breakdown voltage of 25 volts, a collector-base breakdown voltage of 25 volts, and a maximum collector current of 50 mA. The current gain (hFE) ranges from 180 to 540 at a collector current of 5 mA and a collector-emitter voltage of 2 volts. The saturation voltage is 0.3 volts at 50 mA collector current. The transistor features an ECB lead configuration and is suitable for general-purpose amplification and switching applications.