Central Semiconductor Corp. Bipolar Transistors - BJT 2N3302

NPN silicon bipolar transistor for amplification and switching, housed in a TO-18 case. It has a collector-emitter breakdown voltage of 30 V, a collector current rating of 150 mA, and a minimum DC current gain of 300 at 10 mA collector current and 10 V collector-emitter voltage. The saturation voltage is 0.22 V at 10 mA collector current. The collector-base capacitance is 8.0 pF, and the transition frequency is 250 MHz. The device includes a built-in 100 ns turn-on time and 100 ns turn-off time.