Central Semiconductor Corp. Bipolar Transistors - BJT 2N3301

Description
Bipolar Transistors - BJT NPN Gen Pur SS
Description
Bipolar Transistors - BJT NPN Gen Pur SS
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NPN general purpose switching transistor in TO-18 package with a collector-base voltage of 60 V, collector-emitter voltage of 30 V, and collector current of 150 mA. It has a minimum hFE of 120 at 10 mA collector current and 150 mV collector-emitter saturation voltage at 10 mA. Transition frequency is 250 MHz. The device is not rated for low noise applications and has no specified noise figure, turn-on, or turn-off times.

Datasheet Summary
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NPN general purpose switching transistor in TO-18 package with a collector-base voltage of 60 V, collector-emitter voltage of 30 V, and collector current of 150 mA. It has a minimum hFE of 120 at 10 mA collector current and 150 mV collector-emitter saturation voltage at 10 mA. Transition frequency is 250 MHz. The device is not rated for low noise applications and has no specified noise figure, turn-on, or turn-off times.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
2N3301
Bipolar Transistors - BJT 2N3301
Bipolar Transistors - BJT NPN Gen Pur SS

Bipolar Transistors - BJT NPN Gen Pur SS

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number 2N3301
Product Name Bipolar Transistors - BJT
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