Central Semiconductor Corp. Bipolar Transistors - BJT 2N3300

The 2N3300 is an NPN silicon transistor for amplifier and switch applications in a TO-39 case. It has a collector-to-emitter voltage rating of 30 V, a collector-to-base voltage of 60 V, and an emitter-to-base voltage of 5.0 V. The maximum continuous collector current is 150 mA, with a minimum current gain (hFE) of 300 at a collector current of 100 mA and a collector-emitter voltage of 10 V. The collector-emitter saturation voltage is 0.60 V at a collector current of 500 mA. The transition frequency is 250 MHz, and the collector-base capacitance is 8.0 pF. The storage and turn-off times are 60 ns and 150 ns respectively.