Central Semiconductor Corp. Bipolar Transistors - BJT 2N3251

The 2N3251 is a silicon PNP bipolar transistor designed for small signal and general purpose switching applications, housed in a TO-18 package. It has a collector-emitter voltage rating of 40 V, a continuous collector current of 200 mA, and a power dissipation of 360 mW at 25°C. The device has a minimum current gain (hFE) of 50 at VCE=1.0 V and IC=10 mA, with a transition frequency (fT) of 250 MHz. Its collector-base breakdown voltage is 50 V, and emitter-base breakdown voltage is 5.0 V. Operating and storage junction temperatures range from -65°C to +200°C. Thermal resistance from junction to case is 146 °C/W and junction to ambient is 486 °C/W. The part meets RoHS compliance and is marked with its full part number.