Central Semiconductor Corp. Bipolar Transistors - BJT 2N3134

Description
Bipolar Transistors - BJT 50Vcbo 35Vceo 4.0Vebo 150mA 10pF
Description
Bipolar Transistors - BJT 50Vcbo 35Vceo 4.0Vebo 150mA 10pF
Datasheet
Datasheet Summary
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2N3134 is a PNP bipolar junction transistor for amplification and switching, housed in a TO-39 case. It has a collector-base voltage rating of 50 V, a collector-emitter voltage of 35 V, and an emitter-base voltage of 4.0 V. The continuous collector current is 150 mA. The current gain (hFE) ranges from 120 to 150 at a collector current of 100 mA and a collector-emitter voltage of 10 V. The collector-emitter saturation voltage is 0.60 V at a collector current of 150 mA.

Datasheet Summary
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2N3134 is a PNP bipolar junction transistor for amplification and switching, housed in a TO-39 case. It has a collector-base voltage rating of 50 V, a collector-emitter voltage of 35 V, and an emitter-base voltage of 4.0 V. The continuous collector current is 150 mA. The current gain (hFE) ranges from 120 to 150 at a collector current of 100 mA and a collector-emitter voltage of 10 V. The collector-emitter saturation voltage is 0.60 V at a collector current of 150 mA.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
2N3134
Bipolar Transistors - BJT 2N3134
Bipolar Transistors - BJT 50Vcbo 35Vceo 4.0Vebo 150mA 10pF

Bipolar Transistors - BJT 50Vcbo 35Vceo 4.0Vebo 150mA 10pF

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number 2N3134
Product Name Bipolar Transistors - BJT
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