Central Semiconductor Corp. Bipolar Transistors - BJT 2N3114

2N3114 is an NPN high voltage bipolar transistor in a TO-39 case, designed for high voltage applications with a collector-emitter voltage rating of 150 V and a collector-base voltage rating of 150 V. The device has a maximum emitter-base voltage of 5.0 V, a collector cutoff current of 0.01 µA at 100 V, a minimum hFE of 120 at 30 mA and 10 V, and a saturation voltage of 1.00 V at 50 mA. It operates with a transition frequency of 40 MHz and a collector-base capacitance of 9.0 pF. The transistor is suitable for switching and amplification in high voltage circuits.