Central Semiconductor Corp. Bipolar Transistors - BJT 2N3110

The 2N3110 is an NPN bipolar junction transistor for amplification and switching applications, housed in a TO-39 case. It has a collector-emitter voltage rating of 40 V, a collector-base voltage of 80 V, and an emitter-base voltage of 7.0 V. Maximum collector current is 100 mA, with a DC current gain (hFE) ranging from 120 to 150 at 40 mA collector current and 10 V collector-emitter voltage. The saturation voltage is 0.25 V at 10 mA collector current. The transition frequency is 60 MHz, and the collector-output capacitance is 25 pF. It meets the TO-39 packaging standard and is suitable for general-purpose circuits requiring moderate voltage and current handling.