Central Semiconductor Corp. Bipolar Transistors - BJT 2N3108

The 2N3108 is an NPN bipolar junction transistor for amplification and switching applications, housed in a TO-39 case. It has a collector-emitter voltage rating of 60 V, a collector-base voltage of 100 V, and an emitter-base voltage of 7.0 V. The device supports a continuous collector current of up to 100 mA with a DC current gain (hFE) ranging from 120 to 150 at 40 mA collector current and 10 V collector-emitter bias. The saturated collector-emitter voltage is 1.00 V at 1,000 mA collector current. It features a transition frequency of 60 MHz and an output capacitance of 20 pF. The transistor meets RoHS compliance and is designed for general-purpose use.