Central Semiconductor Corp. Bipolar Transistors - BJT 2N3055

The 2N3055 is an NPN silicon power transistor in a TO-3 hermetically sealed metal case, designed for general purpose switching and amplifier applications. It has a collector-base voltage rating of 100 V, collector-emitter voltage of 60 V, continuous collector current of 15 A, and power dissipation of 115 W. The junction operating and storage temperature ranges from -65 to +200 °C, with a thermal resistance of 1.52 °C/W. Minor electrical characteristics include a saturation voltage of 1.1 V at 4 A collector current and a current gain (hFE) of 20 to 70 at 4 A. The device is complementary to the MJ2955 PNP transistor.