Central Semiconductor Corp. Bipolar Transistors - BJT 2N3020

The 2N3020 is an NPN silicon transistor in a TO-39 case designed for general purpose amplifier applications. It has a collector-base voltage rating of 140 V, a collector-emitter voltage rating of 80 V, and a continuous collector current of 1.0 A. Power dissipation is 0.8 W at 25°C ambient temperature and 5.0 W at 25°C case temperature. The minimum current gain (hFE) is 30 at VCE=10 V and IC=150 mA, and 15 at IC=1.0 A. The transition frequency is 100 MHz at IC=50 mA and VCE=10 V. The collector-emitter saturation voltage is 0.5 V at IC=500 mA and IB=50 mA. Operating and storage junction temperatures range from -65°C to +200°C.