Central Semiconductor Corp. Transistor 2N3019

Description
TRANSISTOR, BIPOLAR, BJT, NPN, SS, 3-PIN. FREE 2 YEAR RADWELL WARRANTY
Request a Quote Datasheet
Description
TRANSISTOR, BIPOLAR, BJT, NPN, SS, 3-PIN. FREE 2 YEAR RADWELL WARRANTY
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Transistor - 127886731 - Radwell International
Willingboro, NJ, United States
Transistor
127886731
Transistor 127886731
TRANSISTOR, BIPOLAR, BJT, NPN, SS, 3-PIN. FREE 2 YEAR RADWELL WARRANTY

TRANSISTOR, BIPOLAR, BJT, NPN, SS, 3-PIN. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Discrete Semiconductor Products - 052835-2N3019 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products
052835-2N3019
Discrete Semiconductor Products 052835-2N3019
Manufacturer: Central Semiconductor Corp Win Source Part Number: 052835-2N3019 Category: Discrete Semiconductor Products Family: Transistors (BJT) - Single Packaging: Bulk Mounting Style: Through Hole Package: TO-205AD TO-39-3 Metal Can Manufacturer Device Package: TO-39 Standard Package: 500 Catalog: NPN Transistors Power - Max: 800mW Voltage - Collector Emitter Breakdown (Max): 80V Current - Collector (Ic) (Max): 1A Transistor Type: NPN Current - Collector Cutoff (Max): 10nA (ICBO) Frequency - Transition: 100MHz Vce Saturation (Max) @ Ib Ic: 500mV @ 50mA 500mA DC Current Gain (hFE) (Min) @ Ic Vce: 100 @ 150mA 10V Family Name: 2N3019 Alternative Parts (Cross-Reference): JANTX2N3019; JANS2N3019; 2N3019S; JAN2N3019; Introduction Date: December 22, 2004 ECCN: EAR99 Estimated EOL Date: 2028 Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Limited Application Field: Used in Industrial

Manufacturer: Central Semiconductor Corp
Win Source Part Number: 052835-2N3019
Category: Discrete Semiconductor Products
Family: Transistors (BJT) - Single
Packaging: Bulk
Mounting Style: Through Hole
Package: TO-205AD TO-39-3 Metal Can
Manufacturer Device Package: TO-39
Standard Package: 500
Catalog: NPN Transistors
Power - Max: 800mW
Voltage - Collector Emitter Breakdown (Max): 80V
Current - Collector (Ic) (Max): 1A
Transistor Type: NPN
Current - Collector Cutoff (Max): 10nA (ICBO)
Frequency - Transition: 100MHz
Vce Saturation (Max) @ Ib Ic: 500mV @ 50mA 500mA
DC Current Gain (hFE) (Min) @ Ic Vce: 100 @ 150mA 10V
Family Name: 2N3019
Alternative Parts (Cross-Reference): JANTX2N3019; JANS2N3019; 2N3019S; JAN2N3019;
Introduction Date: December 22, 2004
ECCN: EAR99
Estimated EOL Date: 2028
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Limited
Application Field: Used in Industrial

Buy Now
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
2N3019
Bipolar Transistors - BJT 2N3019
Bipolar Transistors - BJT NPN Gen Pur SS

Bipolar Transistors - BJT NPN Gen Pur SS

Buy Now Datasheet

Technical Specifications

  Radwell International Win Source Electronics VAST STOCK CO., LIMITED
Product Category RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 127886731 052835-2N3019 2N3019
Product Name Transistor Discrete Semiconductor Products Bipolar Transistors - BJT
Polarity NPN
Package Type TO-3; TO-39; SOT3
Packing Method Bulk; Bulk
Unlock Full Specs
to access all available technical data