Central Semiconductor Corp. Discrete Semiconductor Products 2N3019

Description
Manufacturer: Central Semiconductor Corp Win Source Part Number: 052835-2N3019 Category: Discrete Semiconductor Products Family: Transistors (BJT) - Single Packaging: Bulk Mounting Style: Through Hole Package: TO-205AD TO-39-3 Metal Can Manufacturer Device Package: TO-39 Standard Package: 500 Catalog: NPN Transistors Power - Max: 800mW Voltage - Collector Emitter Breakdown (Max): 80V Current - Collector (Ic) (Max): 1A Transistor Type: NPN Current - Collector Cutoff (Max): 10nA (ICBO) Frequency - Transition: 100MHz Vce Saturation (Max) @ Ib Ic: 500mV @ 50mA 500mA DC Current Gain (hFE) (Min) @ Ic Vce: 100 @ 150mA 10V Family Name: 2N3019 Alternative Parts (Cross-Reference): JANTX2N3019; JANS2N3019; 2N3019S; JAN2N3019; Introduction Date: December 22, 2004 ECCN: EAR99 Estimated EOL Date: 2028 Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Limited Application Field: Used in Industrial
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Description
Manufacturer: Central Semiconductor Corp Win Source Part Number: 052835-2N3019 Category: Discrete Semiconductor Products Family: Transistors (BJT) - Single Packaging: Bulk Mounting Style: Through Hole Package: TO-205AD TO-39-3 Metal Can Manufacturer Device Package: TO-39 Standard Package: 500 Catalog: NPN Transistors Power - Max: 800mW Voltage - Collector Emitter Breakdown (Max): 80V Current - Collector (Ic) (Max): 1A Transistor Type: NPN Current - Collector Cutoff (Max): 10nA (ICBO) Frequency - Transition: 100MHz Vce Saturation (Max) @ Ib Ic: 500mV @ 50mA 500mA DC Current Gain (hFE) (Min) @ Ic Vce: 100 @ 150mA 10V Family Name: 2N3019 Alternative Parts (Cross-Reference): JANTX2N3019; JANS2N3019; 2N3019S; JAN2N3019; Introduction Date: December 22, 2004 ECCN: EAR99 Estimated EOL Date: 2028 Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Limited Application Field: Used in Industrial
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Suppliers

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Product
Description
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Discrete Semiconductor Products - 052835-2N3019 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products
052835-2N3019
Discrete Semiconductor Products 052835-2N3019
Manufacturer: Central Semiconductor Corp Win Source Part Number: 052835-2N3019 Category: Discrete Semiconductor Products Family: Transistors (BJT) - Single Packaging: Bulk Mounting Style: Through Hole Package: TO-205AD TO-39-3 Metal Can Manufacturer Device Package: TO-39 Standard Package: 500 Catalog: NPN Transistors Power - Max: 800mW Voltage - Collector Emitter Breakdown (Max): 80V Current - Collector (Ic) (Max): 1A Transistor Type: NPN Current - Collector Cutoff (Max): 10nA (ICBO) Frequency - Transition: 100MHz Vce Saturation (Max) @ Ib Ic: 500mV @ 50mA 500mA DC Current Gain (hFE) (Min) @ Ic Vce: 100 @ 150mA 10V Family Name: 2N3019 Alternative Parts (Cross-Reference): JANTX2N3019; JANS2N3019; 2N3019S; JAN2N3019; Introduction Date: December 22, 2004 ECCN: EAR99 Estimated EOL Date: 2028 Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Limited Application Field: Used in Industrial

Manufacturer: Central Semiconductor Corp
Win Source Part Number: 052835-2N3019
Category: Discrete Semiconductor Products
Family: Transistors (BJT) - Single
Packaging: Bulk
Mounting Style: Through Hole
Package: TO-205AD TO-39-3 Metal Can
Manufacturer Device Package: TO-39
Standard Package: 500
Catalog: NPN Transistors
Power - Max: 800mW
Voltage - Collector Emitter Breakdown (Max): 80V
Current - Collector (Ic) (Max): 1A
Transistor Type: NPN
Current - Collector Cutoff (Max): 10nA (ICBO)
Frequency - Transition: 100MHz
Vce Saturation (Max) @ Ib Ic: 500mV @ 50mA 500mA
DC Current Gain (hFE) (Min) @ Ic Vce: 100 @ 150mA 10V
Family Name: 2N3019
Alternative Parts (Cross-Reference): JANTX2N3019; JANS2N3019; 2N3019S; JAN2N3019;
Introduction Date: December 22, 2004
ECCN: EAR99
Estimated EOL Date: 2028
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Limited
Application Field: Used in Industrial

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
2N3019
Bipolar Transistors - BJT 2N3019
Bipolar Transistors - BJT NPN Gen Pur SS

Bipolar Transistors - BJT NPN Gen Pur SS

Buy Now Datasheet
Transistor - 127886731 - Radwell International
Willingboro, NJ, United States
Transistor
127886731
Transistor 127886731
TRANSISTOR, BIPOLAR, BJT, NPN, SS, 3-PIN. FREE 2 YEAR RADWELL WARRANTY

TRANSISTOR, BIPOLAR, BJT, NPN, SS, 3-PIN. FREE 2 YEAR RADWELL WARRANTY

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Technical Specifications

  Win Source Electronics VAST STOCK CO., LIMITED Radwell International
Product Category Bipolar RF Transistors Bipolar RF Transistors RF Transistors
Product Number 052835-2N3019 2N3019 127886731
Product Name Discrete Semiconductor Products Bipolar Transistors - BJT Transistor
Polarity NPN
Package Type TO-3; TO-39; SOT3
Packing Method Bulk; Bulk
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