Central Semiconductor Corp. Bipolar Transistor Arrays 2N2920A

The 2N2920A is a dual NPN bipolar transistor array in a hermetically sealed TO-78 metal case, designed for differential amplifier applications. Each transistor has a collector-base voltage rating of 60 V, collector-emitter voltage of 60 V, and continuous collector current of 30 mA. Power dissipation for both transistors at TC=25°C is 1.5 W. The minimum current gain (hFE) at VCE=5.0V and IC=10μA is 150, with a transition frequency of 60 MHz. Matching characteristics between the two transistors include a current gain ratio of 0.9 to 1.0 and a maximum VBE mismatch of 1.5 mV at IC=100μA. Operating and storage junction temperatures range from -65°C to +200°C.