The 2N2907A is a silicon PNP epitaxial planar transistor designed for small signal and general purpose switching applications. It is housed in a TO-18 package and has a maximum collector-emitter voltage of 60 V, a continuous collector current of 600 mA, and a power dissipation of 400 mW at 25°C. The transistor has a minimum DC current gain (hFE) of 40 at 10 V and 500 mA, with a maximum of 50. The operating and storage junction temperature ranges from -65°C to +200°C.
Bipolar Transistors - BJT PNP Gen Pur SS
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 2N2907A |
| Product Name | Bipolar Transistors - BJT |
