Central Semiconductor Corp. Bipolar Transistors - BJT 2N2907

The 2N2907 is a silicon PNP epitaxial planar transistor designed for small signal and general purpose switching applications. It is packaged in a TO-18 case and has a maximum collector-emitter voltage of 60 V, a continuous collector current of 600 mA, and a power dissipation of 400 mW at 25°C. The device operates with a junction temperature range of -65°C to +200°C and has a thermal resistance of 438 °C/W from junction to ambient. Current gain (hFE) ranges from 40 to 300 when collector current is 150 mA at a collector-emitter voltage of 10 V. It meets standard industrial requirements for silicon transistors.