Bipolar (BJT) Transistor PNP 40V 600mA 200MHz 1.8W Through Hole TO-18
Win Source Part Number: 1380715-2N2907 PBFREE
Category: Discrete Semiconductor Products>Transistors
Package: Bulk
Standard Package: 2,000 pcs
Power - Max: 1.8 W
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 600 mA
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-18
Temperature Range - Operating: -65°C ~ 200°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 54 pct.
REACH Status: REACH Unaffected
HTSUS: 8541.29.0075
Mfr: Central Semiconductor Corp
Moisture Sensitivity Level (MSL): Not Applicable
| DigiKey | Win Source Electronics | |
|---|---|---|
| Product Category | Transistors | Bipolar RF Transistors |
| Product Number | 1514-2N2907PBFREE-ND | 1380715-2N2907 PBFREE |
| Product Name | Single Bipolar Transistors | Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors |
| Polarity | PNP | PNP |
| Package Type | TO-206AA, TO-18-3 Metal Can | SOT3 |
| IC(max) | 600 milliamps | |
| Power Gain | 100 dB |
